bar65v-02v document number 85644 rev. 1.4, 29-jun-05 vishay semiconductors www.vishay.com 1 16863 12 1 2 rf pin diode - single in sod-523 description with the very low forward resistance combined with a low reverse capacitance the bar65v-02v is ideal for rf-signal switching. depending on the forward cur- rent (if) the forward resistance (rf) can be reduced to only a few hundred m ? . in the reverse mode the iso- lation capacitance is less than 1 pf. due to its low loss behaviour this pin diod e is most suitable for switching of transmitter and receiver in wireless and mobile systems as well as for band switching in tv- tuner systems. features ? space saving sod-523 package with low series inductance very low forward resistance small reverse capacitance lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications for frequency up to 3 ghz rf-signal switching mobile, wireless and tv-applications mechanical data case: sod-523 plastic case weight: approx. 1.6 mg cathode band color: laser marking packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code marking remarks bar65v-02v BAR65V-02V-GS18 or bar65v-02v-gs08 e tape and reel parameter test condition symbol value unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c e3
www.vishay.com 2 document number 85644 rev. 1.4, 29-jun-05 bar65v-02v vishay semiconductors thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol value unit junction soldering point r thjs 100 k/w parameter test condition symbol min ty p. max unit reverse voltage i r = 10 av r 30 v reverse current v r = 20 v i r 20 na forward voltage i f = 100 ma v f 1.1 v diode capacitance f = 1 mhz, v r = 0 c d 0.65 pf f = 1 mhz, v r = 1 v c d 0.55 0.9 pf f = 1 mhz, v r = 3 v c d 0.50 0.8 pf forward resistance f = 100 mhz, i f = 1 ma r f 1 ? f = 100 mhz, i f = 5 ma r f 0.6 0.95 ? f = 100 mhz, i f = 10 ma r f 0.5 0.9 ? charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma t rr 175 ns figure 1. forward resistance vs. forward current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1.0 10 100 1 8 343 f = 100 mhz i f - forward current ( ma ) r - forward resistance ( ) f ? 0.0 0.1 0.2 0.3 0.4 0.5 0. 6 0.7 04 8 12 1 6 20 24 2 8 1 8 335 v r - reverse v oltage (v) c - diode capacitance ( pf ) d f=1mhz
bar65v-02v document number 85644 rev. 1.4, 29-jun-05 vishay semiconductors www.vishay.com 3 figure 3. forward current vs. forward voltage figure 4. reverse voltage vs. reverse current figure 5. typical charge recovery curve 0.01 0.10 1.00 10.00 100.00 0.5 0. 6 0.7 0. 8 0.9 1.0 i - forward current ( ma ) v f - forward voltag e(v) 1 8 327 f 0 20 40 6 0 8 0 100 120 140 1 6 0 1 8 0 200 0.01 0.1 1.0 10 100 1000 v - reverse v oltag e(v) i r - reverse current ( a) 1 8 331 r - 8 - 6 -4 -2 0 2 4 6 8 10 12 -50 0 50 100 150 200 1 8 339 recovery time ( ns ) i - forward current ( ma ) f i f =10ma i r = 6 ma i rr =3ma
www.vishay.com 4 document number 85644 rev. 1.4, 29-jun-05 bar65v-02v vishay semiconductors package dimensions in mm (inches) 16864 iso method e 1.6 (0.062) 1.2 (0.047) 0.3 (0.012) 0.15 (0.006) 0.6 (0.023) 0.8 (0.031) 0.15 a a 0.39 (0.015) 1.35 (0.053) 0.22 (0.008) 0.16 (0.006) 0.35 (0.014) mounting pad layout
bar65v-02v document number 85644 rev. 1.4, 29-jun-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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